Nitrogen?doped tin oxide electron transport layer for stable perovskite solar cells with efficiency over 23%

Tin oxide has made a major breakthrough in high-efficiency perovskite solar cells (PSCs) as an efficient electron transport layer by the low-temperature chemical bath deposition method. However, tin often contains pernicious defects, resulting unsatisfactory performance. Herein, we develop high-quality films via nitrogen-doping strategy for and stable planar PSCs. The aligned energy level at interface of doped SnO2/perovskite, more excellent charge extraction reduced nonradiative recombination contribute to enhanced efficiency stability. Correspondingly, power conversion devices based on N-SnO2 film increases 23.41% from 20.55% pristine SnO2. show outstanding stability retaining 97.8% initial after steady-state output maximum point 600 s under standard AM1.5G continuous illumination without encapsulation, while less than 50% remains This simple scalable shown great promise toward highly